Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: phototransistorDescription: NPN PHOTOTRANS 900NM TO-18 SMALL33945+$22.922650+$21.9430200+$21.3945500+$21.25731000+$21.12022500+$20.96345000+$20.86557500+$20.7675 -
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Category: phototransistorDescription: Silicon NPN Phototransistor67645+$16.914750+$16.1918200+$15.7870500+$15.68581000+$15.58462500+$15.46905000+$15.39677500+$15.3244 -
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Category: phototransistorDescription: Silicon NPN Phototransistor87825+$25.137550+$24.0632200+$23.4616500+$23.31121000+$23.16082500+$22.98905000+$22.88157500+$22.7741 -
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Category: phototransistorDescription: MERMETICSilicon Phototransistor MERMETIC166220+$0.226850+$0.2100100+$0.2016300+$0.1949500+$0.18981000+$0.18655000+$0.183110000+$0.1798 -
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Category: phototransistorDescription: Photo Transistor, 880nm , 0.05A I(C), ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-18, 3Pin32011+$50.532410+$47.6330100+$45.4792250+$45.1478500+$44.81641000+$44.44372500+$44.11235000+$43.9052 -
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Category: phototransistorDescription: BPW76A The BPW76B series phototransistors Vishay Semiconductor BPW76A and BPW76B are a series of silicon NPN phototransistors. They are sealed with TO-18 grade and come with glass windows. They are sensitive to visible light and near-infrared radiation. BPW76A and BPW76B phototransistors are particularly suitable for use as detectors in electronic control and drive circuits. Characteristics of BPW76A and BPW76B phototransistors: TO-18 package through-hole installation with a diameter of 4.7mm, high photosensitivity, high radiation sensitivity, half intensity angle: 40 °, operating temperature: -40 to+125 ° C, infrared phototransistors, Vishay Semiconductor69495+$14.551350+$13.9294200+$13.5812500+$13.49411000+$13.40712500+$13.30765000+$13.24547500+$13.1832
